Materials and methods for creating imaging layers

ABSTRACT

The present invention provides patterned features of dimensions of less than 50 nm on a substrate. According to various embodiments, the features may be “Manhattan” style structures, have high aspect ratios, and/or have atomically smooth surfaces. The patterned features are made from polymer brushes grafted to a substrate. In some embodiments, the dimensions of the features may be determined by adjusting the grafting density and/or the molecular weight of the brushes. Once the brushes are patterned, the features can be shaped and reshaped with thermal or solvent treatments to achieve the desired profiles. The chemical nature of the polymer brush is thus independent of the patterning process, which allows for optimization of the polymer brush used for specific applications. Applications include masks for pattern transfer techniques such as reactive ion etching.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority under 35 USC § 119(e) from U.S.Provisional Application No. 60/664,797, filed Mar. 23, 2005, herebyincorporated by reference in its entirety and for all purposes.

FIELD OF THE INVENTION

The present invention relates to nanoscale patterning. Morespecifically, the present invention relates to creating nanoscalepatterned features using polymer brushes.

BACKGROUND OF THE INVENTION

Production of faster and more powerful integrated circuits in themicroelectronics industry requires that the dimensions of devicespatterned using advanced lithography continue to decrease. Currenthigh-resolution lithographic processes are based on chemically amplifiedresists (CARs) and are routinely used to pattern features withdimensions less than 100 nm. As feature dimensions shrink to below 50nm, however, the use of CARs poses significant new challenges withrespect to problems such as line edge roughness, critical dimensioncontrol, and collapse of patterned structures due to capillary forces.

Thus, new materials and processes are needed to deliver molecular levelcontrol to meet exacting tolerances and margins, and placement of thestructures, including registration and overlay, with nanometerprecision.

SUMMARY OF INVENTION

The present invention provides patterned features of dimensions of lessthan 50 nm on a substrate. According to various embodiments, thefeatures may be “Manhattan” style structures, have high aspect ratios,and/or have atomically smooth surfaces. The patterned features are madefrom polymer brushes grafted to a substrate. In some embodiments, thedimensions of the features may be determined by adjusting the graftingdensity and/or the molecular weight of the brushes. Once the brushes arepatterned, the features can be shaped and reshaped with thermal orsolvent treatments to achieve the desired profiles. The chemical natureof the polymer brush is thus independent of the patterning process,which allows for optimization of the polymer brush used for specificapplications. Applications include masks for pattern transfer techniquessuch as reactive ion etching.

One aspect of the invention relates to a patterned substrate; whereinthe pattern has one or more features having an aspect ratio of at least1:100. The features are formed from a plurality of polymer brushes. Incertain embodiments, at least some brushes and features have a height ofat least 2.5 nm. According to various embodiments, the pattern containsa feature having an aspect ratio of at least 1:10, 1:1, or 2:1. Also, incertain embodiments, the height of the brushes may be at least 5 nm or10 nm. According to various embodiments, the pattern contains a featurehaving a width of no more than 50 nm, 25 nm, or 10 nm. Also in certainembodiments, the features in the pattern have substantially verticalsidewalls.

Another aspect of the invention relates to an array of patternedfeatures on a substrate. The features are formed from a plurality ofpolymer brushes and, in certain embodiments, have a line edge roughnessof no more than 10 nm. In particular embodiments, the features have aline edge roughness of no more than 2 nm. Also in certain embodiments,the features have a surface roughness of no more than 5 nm or 2 nm. Incertain embodiments, the features have substantially vertical sidewallsand/or have aspect ratios of at least ratios of at least 1:10, 1:1 or2:1 and/or widths of no more than 50 nm, 25 nm, or 10 nm.

Yet another aspect of the invention relates to a method of reshapingpatterned features on a substrate. The method involves patterning thesubstrate, and after patterning the substrate, treating the patternedfeatures to achieve a desired shape. According to various embodiments,treating the patterned features involves exposing the features to asolvent and/or annealing the features. Also according to variousembodiments, the patterned features having aspect ratios of at least100:1, 10:1, 1:1 or 1:2 and/or substantially vertical sidewalls arecreated.

Yet another aspect of the invention relates to a method of transferringa pattern to a substrate. The method involves patterning a substratewith polymer brushes to create an etch mask and etching the unmaskedareas of the substrate.

These and other aspects of the invention are discussed further belowwith reference to the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a substrate with patterned features according to oneembodiment of the invention.

FIGS. 2 a-c shows aspects of one method of generating patterned brushesaccording to various embodiments of the invention.

FIG. 3 is an SEM image of patterned features according to one embodimentof the present invention.

FIG. 4 is a schematic showing “mushroom” and rectangular configurationsthat polymer brushes may assume on a substrate.

FIG. 5 a is a schematic showing two distinct polymer brush featurescollapse into one brush as grafting density, G, and molecular weight, M,are increased past a certain limit.

FIG. 5 b shows an image of two distinct polymer brush features and animage of collapsed brush that occurs as G and M are increased past acertain limit. The images were generated from a lattice simulation.

FIGS. 6 a-c show feature profiles resulting from a molecular dynamicssimulation of polymer brush features.

FIG. 7 is a plot of RMS surface roughness of features with G values of0.05, 0.15 diffuse and 0.15 as a function of temperature.

FIG. 8 is a stability diagram showing limits on grafting density for a Mof 30,000 g/mol as determined by lattice simulations of line features ofbrushes.

FIGS. 9 a-c show SEM images of substrates patterned with a 50 nm 1:1linear pattern and a grafting density of 0.7 chains/nm² using brushes ofvarious molecular weights.

FIGS. 10 a-c show SEM images of substrates patterned with a 50 nm 1:1linear pattern and a grafting density of 0.25 chains/nm² using brushesof various molecular weights.

FIGS. 11 a and b show SEM images of substrates patterned with a 25 nm1:1 linear pattern and a grafting density of 0.3 chains/nm² usingbrushes of various molecular weights.

FIGS. 12 a-d shows an example of using the patterned brushes of thepresent invention as an etch mask for pattern transfer to a substrate.

DETAILED DESCRIPTION

The present invention provides patterned features of features sizes ofless than 50 nm suitable for use in applications such as patterntransfer techniques. Methods for creating the patterned features arealso described below. To precisely transfer patterns, it is necessary tohave “Manhattan” style features (i.e. features with vertical sidewalls)with high aspect ratios and smooth sidewalls. For some applications, themaximum tolerable line edge roughness is 5-10% of the feature size. Forfeature sizes on the order of 10-50 nm, line edge roughness should be nomore than 0.5-5 nm.

The patterned features of the present invention comprise polymerbrushes. A polymer brush is a polymer covalently bonded at one end to asite on a substrate. The sites where the polymer brushes attach to thesubstrate are referred to as grafting sites. In some instances, thepolymer bonded to the substrate is referred to as a polymer brushgrafted onto the substrate. The surface or interfacial tension (i.e.polymer:air or polymer:solvent tension) of polymer brushes make themsuitable for forming patterned features style features because it yieldsatomically smooth surfaces—just as surface tension makes a droplet ofliquid atomically smooth.

FIG. 1 shows substrate with patterned features according to oneembodiment of the invention. Substrate 101 has grafting sites 103.Features 105 are made of polymer brushes—polymers covalently bonded to amolecule on the substrate at the grafting sites 103. In this embodiment,the grafting sites are initiators attached to the substrate. Thegrafting density, G, is the number of grafting sites per unit area. (Gis also the number of brushes or chains per unit area, as each graftingsite is bonded to a brush). Features 105 are Manhattan style features.Manhattan style features are generally rectangular features withsubstantially vertical sidewalls. As discussed above, Manhattan stylepatterned features are useful to transfer patterns. In addition to beingManhattan style, features 105 have substantially smooth sidewalls andhigh aspect ratios.

FIG. 2 a shows one method of generating the patterned brushes shown inFIG. 1. First, an imaging layer 202 is prepared on a substrate 201 inoperation A. The imaging layer contains surface initiator molecules atthe desired grafting density. FIG. 2 b shows an enlarged view of theimaging layer 202 on the substrate 201.

In the example shown in FIG. 2 b, the imaging layer is prepared byforming a self-assembled monolayer (SAM). The SAM in FIG. 2 b has inertmolecules 203 and molecules with an initiator 204. Any type of suitableSAM may be used, including SAMs of silanes and alkanethiols. The imaginglayer is not limited to SAMs, but may be any type of surface (e.g. apolymer surface) that includes or may be chemically modified to havegrafting sites.

The initiator shown in FIG. 2 b is an alkoxyamine initiator. Anymolecule that can be tethered or attached to the surface and covalentlybond with the polymer brush may be used. Many initiator molecules forpolymer brushes are known in the art. Initiators such as the one shownin FIG. 2 b and other initiators are described in Hawker C. J., BosmanA. W. and Harth E., “New polymer synthesis by nitroxide mediated livingradical polymerizations,” CHEMICAL REVIEWS 101 (12): 3661-3688 December2001. Other initiators are described in Zhao B. and Brittain W. J.“Polymer brushes: surface-immobilized macromolecules,” PROGRESS INPOLYMER SCIENCE 25 (5): 677-710 June 2000. Both of these references arehereby incorporated by reference in their entireties and for allpurposes.

The initiators 204 are attached at the desired grafting density, G. Thegrafting density could be raised by adding more initiator molecules.After the imaging layer is prepared, a photoresist layer 205 isdeposited on the imaging layer 202 as shown in operation B. Photoresistlayer 205 is a material that may be patterned by photolithography, forexample polymethylmethacrylate (PMMA). Layer 205 is masked and patternedin operation C. As discussed above, the present invention isparticularly directed to patterns at scales of 50 nm and below—thus, itis necessary to use a patterning technique capable of nanoscalepatterning, for example, extreme ultraviolet (EUV) lithography.Operation D shows the imaging layer 202 etched by an O₂ plasma etch. Theplasma etch removes the imaging layer and/or destroys the initiatorsites at the patterned areas. In operation E, the patterned features 206are created by growing the polymer brushes and annealing at sites wherethe imaging layer is functional. FIG. 2 c presents an enlarged view ofthe brushes grown on the imaging layer 202. The brushes are grown in asolution of monomer 207 and free initiator 208. A polymer brush is grownat each grafting site. Free polymers are also grown in the solution. Themolecular weight of the polymer brushes grown may be determined bytaking a sample of solution and determining the molecular weight of thepolymers in solution by any known method.

The method shown in FIGS. 2 a-2 c involves creating a pattern ofinitiation sites on the substrate surface, and then polymerizing thebrushes at the initiation sites. The patterned brushes could also bemade by polymerizing the brushes at the desired G over the entiresurface, and then selectively removing areas of the brushes to createthe desired pattern. Selective removal may be accomplished, for example,by adaptive electron beam or photolithography.

FIG. 3 is an SEM image of patterned features according to one embodimentof the present invention. Lines 301 are patterned polystyrene brushes ofwidth 50 nm spaced 50 nm apart (a 1:1 pitch). Grafting density, G, is0.7 chains/nm². The height of the features in FIG. 3 is 12 nm. Theaverage molecular weight, M, of the brushes in the pattern is about 9720g/mol. PDI, the polydispersity index, is equal to Mw/Mn where Mw is theweight average molecular weight and Mn is the number average molecularweight and is used as measure of the width of the molecular weightdistribution. Polymer mixtures with PDIs of less than 1.05 have beenobtained (with 1 being the PDI where all chains are of the samemolecular weight.) It is believed that surface roughness correlates toPDI. In preferred embodiments, the molecular weight distribution isnarrow. The PDI of 1.34 for the polymers in the patterned brushes inFIG. 3 indicates a fairly narrow distribution, although one of skill inthe art will recognize that the maximum tolerable PDI is dependent onthe application.

Height, Grafting Density and Molecular Weight

The height, H, of the features is related to the grafting density, G,and molecular weight of the brushes, M. FIG. 4 shows polymer brushes onsurface in a rounded or “mushroom” configuration 401 and a rectangularconfiguration 402. While surface tension of the brushes results insmooth surfaces, these mushroom configurations are not desirable forpattern transfer and other applications. Increasing G, however, resultsin the brushes extending and adopting a more rectangular configurationas such as configuration 402. As shown in FIG. 1, a feature is formed bymultiple brushes if G is high enough that the brushes have therectangular configuration shown rather than the mushroom configuration.

As shown in FIG. 4, the height of the brushes (and the feature) is afunction of G. As G is increased, the height of the brushes increases.Height is also a function of the average molecular weight of thebrushes, M. As M is increased, the length of each chain and the heightof the feature are increased. (Average molecular weight may be expressesas a weight average or number average. Unless otherwise specified, inthis application M refers to the number average molecular weight). It ispossible to increase height of the feature by increasing G and M.However, increasing G and M too much results in a collapsed brush. FIG.5 a shows two distinct polymer brush features and a collapsed brush thatoccurs as G and M are increased past a certain limit. FIG. 5 b showsstable and collapsed polymer brush features as modeled in a latticesimulation. The features are modeled as line features—although notshown, the lines extend infinitely in and out of the plane of the paper.The white sites are initiator sites. Stable polymer brushes formdiscrete features, which may be used for pattern transfer or otherapplications. Once the brushes are unstable, they collapse to a singleform a layer of material on the surface.

Height or aspect ratio of the feature and feature shape may all becontrolled by varying G and M constrained by certain limits to avoidcollapse. FIGS. 6 a-c demonstrate that aspect ratio and profile offeatures can be controlled by adjusting G and M. FIGS. 6 a-c showfeature profiles resulting from a molecular dynamics simulation ofpolymer brush features where the brushes were modeled as chains in acontinuum. FIG. 6 a shows a feature with G=0.20 chains/nm² and Mapproximately 25,000 g/mol. The aspect ratio is 1:1 (10 nm height:10 nmwidth). FIG. 6 b shows a feature with G=0.25 chains/nm and the samemolecular weight as the feature in FIG. 6 a (25,000 g/mol). The heightis 12 nm with aspect ratio 1.2:1. Increasing G by 0.05 chains/nm²results in a higher aspect ratio. FIG. 6 c shows a feature with the samegrafting density as the feature in FIG. 6 a (0.2 chains/nm²) and M of50,000 g/mol. The feature has a height of 12 nm and an aspect ratio of1.2:1. Doubling M results in a higher aspect ratio. The results showthat aspect ratio of a feature can be controlled by changing G and/or M.

FIGS. 6 a-c also show that feature shape may be controlled by adjusted Gand M. The feature in FIG. 6 a has a rounded or hill-like profile.Increasing G results in a feature with a more rectangular profile as inFIG. 6 b, with nearly vertical sidewalls and a horizontal top. Theprofile of the feature shown in FIG. 6 c is a bubble-like shape withfairly vertical sidewalls and a rounded top. Profile shape can becontrolled by adjusting G and/or M. In forming features, verticalsidewalls are generally the most important aspect of the shape. Theprofiles in FIGS. 6 a and 6 b have nearly vertical sidewalls—thesidewalls of the profile in FIG. 6 b are at a slightly acute angle, andthose in FIG. 6 c are at a slightly obtuse angle. Perfectly ornear-perfectly vertical sidewalls would be obtained with adjusting G andM. Although vertical sidewalls are the most important aspect of theshape for many applications, the overall shape of the features can beoptimized for a particular application by adjusting G and M.

As described above, G and M may be varied to control feature propertiessuch as height, aspect ratio and feature shape. G and M are constrained,however, by feature collapse described above with respect to FIG. 5. Forexample, collapse of a 50 nm patterned polystyrene brush was found tooccur at M of 44,000 g/mol, and a height of about 20 nm for a G of 0.25chains/nm². The features were exposed to toluene post-patterning. Thepoint at which the features collapse depends on polymer brush used aswell as the feature size, G and M, and the particular post-patterningtreatment, if any. Since feature collapse is dependent on both G and M,there are not absolute limits on either G or M. However, for aparticular feature size, grafting density and post-patterning treatment,an upper limit on molecular weight of the brush may be determined for aparticular brush and post-patterning treatment. Similarly, for aparticular feature size, molecular weight and post-patterning treatment,an upper limit on grafting density may be determined.

FIG. 8 is a stability diagram showing limits on grafting density for a Mof 30,000 g/mol as determined by lattice simulations of line features ofbrushes. For feature sizes up to about 35 nm, a grafting density of upto 0.15 chains/nm² results in stable features. For larger features,grafting density of up to about 0.35 chains/nm² results in stablefeatures. Similar stability diagrams may be determined for any molecularweight and post-patterning treatment.

Patterned Feature Size

According to various embodiments, the patterned features of the presentinvention may have a minimum aspect ratio ranging from 1:100 to 2:1. Insome embodiments, the features have aspect ratios of at least 1:10, 1:9,1:8, 1:7, 1:6, 1:5, 1:4, 1:3, 1:2, 1:1, 1.3:1, 1.5:1, 1.7:1, 1.9:1 or2:1. As discussed above, aspect ratios may be adjusted by varying G andM. Even larger aspect ratios may be obtainable with varying G and M andthe post-patterning treatment.

The feature size is the smallest width of a feature in the pattern. Forlinear features, it is the width of the line. As discussed above, thisinvention is particularly suitable for pattern with feature sizes of 50nm or below. The feature size may be about 50 nm, 45 nm, 40 nm, 35 nm,25 nm, 20 nm, 15 nm, 10 nm, 5 nm or below. In preferred embodiments, thefeature size is 25 nm or below. In particularly preferred embodiments,the feature size is about 10 nm or below. Features sizes as small as thewidth of a polymer brush molecule could be obtained. Feature size isdetermined by the patterning process, for example the EUV lithographicpatterning described in FIG. 2.

Feature height may be any height that may be maintained withoutcollapse. According to various embodiments, feature height is at leastabout 2.5 nm, 3 nm, 4 nm, 5 nm, 10 nm, 15 nm, 20 nm, 25 nm or 30 nm. Ina preferred embodiment, feature height is at least about 2.5 nm.

Roughness

The polymer brush features are smooth and have low roughness. In certainembodiments, the polymer brush features of the present invention areatomically smooth. Surface roughness measures the amount of variation inthe topography of the feature. It should be noted that surface roughnessdoes not measure deviations in the topography at the nanometer scale(e.g. a rounded top) but at the tenth of nanometer scale. Surfaceroughness has been found to be low for the polymer brushes of theinvention regardless of G and M. FIG. 7 is a plot of RMS surfaceroughness of features with G's of 0.05, 0.15 diffuse and 0.15 as afunction of temperature. RMS surface roughness a commonly used measureof surface roughness. It is the root mean square of the deviations ofthe heights of local features from the mean feature height. The data inFIG. 7 was generated by a lattice model of a feature in which thebrushes were modeled as chains on a lattice. “Diffuse” indicates thatthe model includes defects near the edges of the lines. Values ofsurface roughness under 1 nm are obtained for all G's in FIG. 7.According to various embodiments, the surface roughness may range frombelow 1 nm to 10 nm.

Line edge roughness measures the variation in the widths of linefeatures. As with surface roughness, low line edge roughness has beenfound to result for all values of G and M. According to variousembodiments, the line edge roughness may range from less than 1 m to 10nm. In preferred embodiments, the line edge roughness ranges from lessthan 1 nm to 5 nm. In particularly preferred embodiments, the line edgeroughness ranges from less than 1 nm to 2 nm. In certain embodiments,the line edge roughness is no more than 10% of the feature size. Inpreferred embodiments, the line edge roughness is no more than 5% of thefeature size.

FIG. 7 also shows that surface roughness is low for a “diffuse” G—i.e. apatterned feature where the grafting density is non-uniform. Non-uniformgrafting densities may occur for various reasons, for examplenon-uniformity in creating the initiator sites or destruction ofinitiator sides at the edges of the features during patterning. Thelatter situation was modeled in generating the data in FIG. 7 byintroducing defects in G at the edges of the features to create theG=0.15 diffuse. The resulting surface roughness is approximately equalto that of the perfectly uniform pattern of G=0.15. This indicates thateven with defects in the grafting density, the polymer brush features ofthe present invention have low surface roughness. The same result wasfound with line edge roughness—i.e. that defects due to non-uniformitiesin the grafting sites did not increase line edge roughness appreciably.

Shaping and Re-Shaping

As explained above, height is a function of grafting density andmolecular weight. However, the dependency of height on grafting density(i.e. linear, non-linear, etc.) is solvent-dependent. In good solvents,the height of the brushes is less dependent on grafting density than inbad solvents. For example, the height of polystyrene brushes in benzene(a good solvent) has been found to be proportional to MG^(1/3). In water(a poor solvent), the height is proportional to MG, while in cyclohexane(a “theta” or in-between solvent), height is proportional to MG^(1/2).Thus, feature height and aspect ratio of patterned features may bechanged by exposing the features to a solvent and letting the materialequilibrate. Any solvent that has the desired effect on the patternedfeatures may be used. Examples of solvents are organic solvents such astoluene and supercritical fluids. Another method of adjusting patternedfeatures of a given G and M is by annealing the polymer brush above theglass transition temperature (in the case of an amorphous polymer) andletting the material equilibrate into the desired shape.

Exposure to a solvent and/or annealing the polymer brushes affects theshape of the features. However, because the brushes are covalently boundto the substrate surface, the treatment does not destroy the patternedfeatures.

Because the patterned features may be re-shaped by exposure to a solventand/or annealing, the chemical nature of the brush may be optimized forpost-patterning applications without regard to the patterning process.This is a significant improvement over current photoresist technologywhere photoresist materials must be optimized to be patterned as well asfor post-patterning applications. Using the methods of this invention,the patterned features may be re-shaped as necessary after patterning.According to various embodiments, re-shaping the features may comprisemaking the features Manhattan style features, i.e. with substantiallyvertical sidewalls and/or substantially flat tops, changing the aspectratio of the features and/or reducing the surface and line edgeroughness.

Polymer Brushes

A polymer brush is a polymer covalently bonded to a site on a substrate.Any polymer that can be covalently bonded to a site on the substrate andtolerate the conditions of the post-processing treatments andapplications may be used. The polymer is generally covalently bonded toan initiator that is bound or tethered to the substrate surface. Anysuitable polymer may be used, for example polystyrene (PS). Preferredpolymers include styrenes, substituted styrenes, acrylates (e.g. polymethylmethacrylate or PMMA), silanes and siloxanes. Silanes andsiloxanes are particularly preferred where high etch resistance isrequired (for example, if the pattern is to be used as an etch mask).The brush may be tailored for the application. For example, a polymerbrush comprising a biologically active molecule (e.g. a polypeptide orpolynucleotide) may be used to interact with cells or other molecules.Similarly, a polymer brush may have desired electrical or opticalproperties.

The molecular weight of the polymers refers to the average molecularweight. Values of M given in this specification are number-averagemolecular weights. Molecular weight of the polymers may be expressed asequivalent polystyrene molecular weights. Equivalent polystyrenemolecular weight refers to a polymer that has a molecular weightequivalent to polystyrene as determined, for example, by gelchromatography. The actual molecular weight may be different from theequivalent polystyrene weight. Although the stiffness of the polymeraffects behavior, a polymer with a certain equivalent polystyrenemolecular weight would be expected to behave in generally the same wayas polystyrene of that molecular weight. Thus, values of M known to workfor polystyrene may be generalized to all polymers.

The molecular weight may be any value that does not result in collapseof the polymer brush features. As discussed above, feature collapse isdependent on G and feature size and post-patterning treatment. Generalguidelines, based on experiments, are as follows: For a feature sizearound 50 nm with a grafting density of less than 0.7 chains/nm²,equivalent polystyrene molecular weights of less than 25,000 g/mole arestable. For features sizes around 50 nm and a grafting density less than0.25 chains/nm², equivalent polystyrene molecular weights of less thanabout 45,000 g/mole are stable. For feature sizes between about 20-30rum with grafting density is less than about 0.4 chains/nm², equivalentpolystyrene molecular weights of less than about 30,000 g/mole arestable. Collapse is also a function of the distance between patterns. Inall the preceding examples, the distance between features is equal tothe feature size, i.e. the pitch of the pattern is 1:1. However, in apattern where distance between features is greater or less than thefeature size, the allowable molecular weight will be increased ordecreased accordingly. For example, for a feature size of 30 nm and apitch of 1:2 (i.e. 30 nm features with a 60 nm space between features),larger heights and molecular weights may be obtained than for the samesize feature and a 1:1 pitch. The molecular weights given above are alsobased on a post-patterning exposure to toluene. Values for differentpost-patterning treatments may vary.

Patterns

Although the above discussion and below examples refer to linearpatterns, the patterned features and methods may be used with any typeof pattern, including dense lines and arrays of dots. The patternedfeatures may be irregular patterned features (e.g. including angles).The pattern may include any type feature found in patterns useful in themicroelectronics industry.

The invention is particularly suited for patterns with features sizes of50 nm below.

Applications

The patterned features may be used for pattern transfer techniques. Forexample, the patterned brush features may be used as an etch mask inreactive ion etching. The patterned features may also be functional. Forexample, polymer brushes features incorporating nucleic acid or peptidesequences could be used to interact with cells. Polymer brushes featuresmay also have electrical or optical functions (e.g. the features may beelectrically conductive).

FIGS. 12 a-d show an example of how the patterned brushes of the presentinvention may be used as an etch mask for pattern transfer to asubstrate. The substrate may be a silicon wafer substrate. In someembodiments, the wafer may have additional layers that requirepatterning, such as dielectric materials, deposited on it. In FIG. 12 a,polymer brush features 1201 are patterned on substrate 1202. For thisapplication, a polymer with a high etch resistance such as a silane orsiloxane is preferred. As discussed above in the context of FIGS. 2 a-c,patterning the substrate may involve creating patterned initiation siteson a substrate and growing polymer brushes at the patterned sites. Othermethods of patterning include growing polymer brushes across the surfaceof the substrate and selectively removing brushes to create the desiredpattern. After patterning the substrate, the polymer brushes may betreated by exposure to a solvent or annealing in FIG. 12 b to achievethe desired feature height and profile for the mask. In FIG. 12 c, thesubstrate is etched with an reactive ion etch to transfer the patterninto the substrate. The polymer brushes may then be removed in FIG. 12d. One of skill in the art will understand that the process depicted inFIGS. 12 a-d is an example and other known pattern transfer processesand techniques may be used in conjunction with a polymer brush etchmask.

EXAMPLES

The following examples provide details illustrating aspects of thepresent invention. These examples are provided to exemplify and moreclearly illustrate these aspects of the invention and are in no wayintended to be limiting.

Example 1

Substrates with an imaging layer with initiator sites of graftingdensity G of 0.7 chains/nm² were prepared as discussed above withrespect to FIG. 2. A PMMA photoresist layer was spun on the imaginglayer and patterned using EUV-IL. The resulting pattern on eachsubstrate was a 1:150 nm linear pattern (i.e. 50 nm lines, spaced 50 nmapart). Polystyrene patterned brushes were then grown on the substrates.The reaction was stopped at the desired molecular weight and the sampleswere placed in a Soxhlet extractor and exposed to a toluene solvent for48 hours. The samples were then removed from the solvent and dried.

Patterned brushes of various molecular weights were grown and observed.Molecular weight was increased until feature collapse was observed.Feature collapse is the point at which discrete features are no longerobserved. FIGS. 9 a-c show SEM images of the patterned brushes withvarious molecular weights. The average molecular weight of the patternedbrushes in FIG. 9 a is 9720 g/mol with PDI equal to 1.34. Feature heightis 12 nm. As can be seen in FIG. 9 a, the patterned features aresubstantially defect-free. FIG. 9 b shows a patterned brush with brushesof 14,000 g/mol and a PDI of 1.26. Height is 18 nm. The patternedfeatures in FIG. 9 b have more defects (due to polymer chains bridginggaps) than those in FIG. 9 a. The patterned brush in FIG. 9 c has amolecular weight of 23,750 g/mol, a PDI of 1.32 and a height of 26 nm.Increasing M (and height) leads to more defects due to chains bridginggaps as can be seen in comparing FIG. 9 c to FIG. 9 b. Feature collapseoccurred at an M of 26,800 g/mol and a feature height of about 30 nm.

Example 2

Substrates with a 50 m 1:1 linear pattern and a grafting density of 0.25chains/nm² were prepared as in Example 1. FIGS. 10 a-c show SEM imagesof the patterned brushes with various molecular weights.

The average molecular weight of the patterned brushes in FIG. 10 a is17,230 g/mol with PDI equal to 1.25. Feature height is 8 nm. Thepatterned features are well ordered with few defects. As with the 0.7chaims/nm² in Example 1, increasing M results in taller features andmore defects. FIG. 10 b shows a patterned brush with brushes of 30,290g/mol and a PDI of 1.40. Height is 13 nm. The patterned features in FIG.10 b have more defects than those in FIG. 10 a. The patterned brushes inFIG. 10 c have a molecular weight of 37,810 g/mol, a PDI of 1.4 and aheight of 16 nm. Defects are observed throughout the pattern. Featurecollapse occurred at an M of 44,000 g/mol and a feature height of about20 nm.

The results shown in Examples 1 and 2 demonstrate that lower graftingdensity (i.e. fewer chains per unit area) require larger polymers(higher M) to get reach a certain height. Brushes of 9,720 g/mol arerequired to achieve a feature height of 12 nm for a G of 0.7 chains/nm²(FIG. 9 a), while brushes of 30,290 g/mol are required to achieve aboutthe same feature height for a G of 0.25 chains/nm² (FIG. 10 b).

A nearly defect free pattern was formed over a 0.3 mm² area with G=0.25chains/nm² and M=20,000 g/mol.

Example 3

Substrates with a 25 nm 1:1 linear pattern and a grafting density of0.30 chains/nm² were prepared as described in Example 1. FIGS. 11 a and11 b show SEM images of the patterned brushes with various molecularweights. The brushes in FIG. 11 b have a M of 17,380 g/mol, a PDI of1.34 and a height of 10 n-m. Large areas of defects are observed. FIG.11 b shows patterned brushes with M of 24,840, a PDI of 1.33 and aheight of 12 nm. As with the pattern shown in FIG. 11 a, large areas ofdefects are observed. Feature collapse occurred at an M of 30,250 g/moland a height of about 14 nm. Defects due to chains bridging the gapsoccurred at all molecular weights. This is due to the fact that gaps ofthe patterns are 25 nm. Increasing the gap width (i.e. changing thepitch) for a feature size of 25 nm would result in fewer defects.

Example 4

Multiscale modeling of patterned polymer brushes was done to determinestability, achievable aspect ratios, side wall and surface roughness androbustness of the structure to defects. Patterned brushes were modeledas chains on a cubic lattice (scale around 10 nm), as chains in acontinuum (scale around 1 nm) and as atomistic (scale around 0.2=m).

The stability of patterned polymer brushes was predicted from modelingthe brushes as chains on a cubic lattice. FIG. 5 b shows stable andcollapsed polymer brush features as modeled. The features are modeled asline features—although not shown, the lines extend infinitely in and outof the plane of the paper. The white sites are initiator sites. Resultsof a simulation with M=30,000 g/mol appear in FIG. 8. For feature sizesup to about 35 nm, a grafting density of up to 0.15 chains/nm² resultsin stable features. For larger features, grafting density of up to about0.35 chains/nm² results in stable features. The white points 801-803 onthe stability graph in FIG. 8 correspond to experimental data ofcollapse given above in Examples 1-3 for particular grafting densitiesand feature sizes. Point 801 represents the 50 nm brushes with G=0.7chains/nm² (Example 1; shown in FIG. 8 at G>0.4 chains/nm²) and point803 represents the 25 nm brushes with G=0.25 chains/nm² (Example 3).Collapse of these features occurred at M's of approximately 30,000g/mol. As can be seen from FIG. 8, at an M of 30,000 g/mol, points 801and 803 are within the collapsed region and thus in agreement with themodel. Point 802 represents the 50 nm brush with G=0.25 chains/nm²(Example 2). Collapse of the brush occurred at 44,300 g/mol; at 30,000g/mol, the features were well within the stable region, also inagreement with the model.

Features profiles were modeled as chains in a continuum using amolecular dynamics simulation. Results are discussed above with respectto FIGS. 6 a-c.

Surface roughness as a function of grafting densities was determinedusing an atomistic model. Results are discussed above with respect toFIG. 7 and show that surface roughness is on the order of 1.0 nm orless. It is notable that the RMS surface roughness for G=0.15, diffuseis nearly equivalent to that for G=0.15. This result shows that smoothsurfaces are obtainable even where there are defects in the placement ofgrafting sites.

Although the foregoing invention has been described in some detail forpurposes of clarity of understanding, it will be apparent that certainchanges and modifications may be practiced within the scope of theinvention. It should be noted that there are many alternative ways ofimplementing both the process and compositions of the present invention.Accordingly, the present embodiments are to be considered asillustrative and not restrictive, and the invention is not to be limitedto the details given herein.

All references cited are incorporated herein by reference in theirentirety and for all purposes.

1. A pattern on a substrate comprising a feature having an aspect ratioof at least 1:100, the feature comprising a plurality of polymer brushesattached to the substrate and having a height of at least 2.5 nm.
 2. Thepattern of claim 1, wherein the aspect ratio is at least 1:10.
 3. Thepattern of claim 1, wherein the aspect ratio is at least 1:1.
 4. Thepattern of claim 1, wherein the aspect ratio is at least 2:1.
 5. Thepattern of claim 1, wherein the height is at least 5 nm.
 6. The patternof claim 1, wherein the height is at least 10 nm.
 7. The pattern ofclaim 1, wherein the width of the feature is no more than about 50 nm.8. The pattern of claim 1, wherein the width of the feature is no morethan about 25 nm.
 9. The pattern of claim 1, wherein the width of thefeature is no more than about 10 nm.
 10. The pattern of claim 1, whereinthe feature has a size of about 50 nm and a grafting density of lessthan about 0.7 chains/nm- and the equivalent polystyrene molecularweight of the polymer brush is less than about 25,000 g/mole.
 11. Thepattern of claim 1, wherein the feature has substantially verticalsidewalls.
 12. The pattern of claim 1, wherein the feature has a lineedge roughness of no more than 10 nm.
 13. The pattern of claim 1,further comprising at least one additional feature having an aspectratio of at least 1:2.
 14. An array of patterned features on asubstrate; wherein the features comprise polymer brushes and have a lineedge roughness of no more than 10 nm.
 15. The array of patternedfeatures of claim 14, wherein the features have a line edge roughness ofno more than 2 nm.
 16. The array of patterned features of claim 14,wherein the features have a surface roughness of no more than 5 nm. 17.The array of patterned features of claim 14, wherein the features have asurface roughness of no more than 2 nm.
 18. The array of patternedfeatures of claim 14 wherein the features have substantially verticalsidewalls.
 19. The array of patterned features of claim 14, wherein thefeatures have aspect ratios of at least 1:10.
 20. The array of patternedfeatures of claim 14, wherein the features have widths of no more than25 nm.
 21. A method of reshaping patterned features on a substrate,comprising: a) patterning the substrate with polymer brushes; b) afterpatterning the substrate, treating the patterned features to achieve adesired shape.
 22. The method of claim 21, wherein treating thepatterned features comprises reducing the line edge roughness to lessthan 5 nm.
 23. The method of claim 21, wherein the desired shape hassubstantially vertical sidewalls.
 24. The method of claim 21 whereintreating the patterned features comprises exposing the features to asolvent.
 25. The method of claim 21 wherein treating the patternedfeatures comprises annealing the features.
 26. The method of claim 21wherein achieving a desired shape comprises achieving a feature aspectratio of at least 1:2.
 27. A method of transferring a pattern to asubstrate comprising: a) patterning polymer brushes on the substrate tocreate an etch mask; and b) etching the unmasked areas of the substrate.